Samsung to Launch DDR3 Memory Production by Year-End

Samsung Electronics has recently announced that it has developed and validated the first 40nm DRAM chip and module.

This new 1Gb DDR2 component (x8) and a corresponding 1Gb 800Mbps DDR2 SO-DIMM - both to be processed at 40nm - have been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chipsets.

Samsung plans to apply its 40nm-class technology to also develop a 2Gb DDR3 device for mass production by the end of 2009.
Источник: Digitimes